PD55025-E Datasheet, PDF (11/22 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD55025-E, PD55025S-E
5
Test circuit
Test circuit
Figure 19. 500MHz test circuit schematic (engineering)
VGG
+
+
R3
C10 ^C9
C8
B1
R2
RF
INPUT
Z1
C1
C2
Z2
Z3
C3 C4
R1
Z4
C7
DUT
C5 C6
B2
C19
C18
C17
C16
L1
Z5
Z6
Z7
Z8
C15
Z9
N2
RF
OUTPUT
C12 C11
C13
C14
VDD
Table 6. Test circuit component part list
Component
Description
B1,B2
FERRITE BEAD
C1,C13
C2,C3,C4,C12,C13,C14
300 pF, 100 mil CHIP CAPACITOR
1 to 20 pF TRIMMER CAPACITOR
C6
C7, C19
C10, C16
39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
120 pF 100 mil CHIP CAPACITOR
10 µF, 50 V ELECTROLYTIC CAPACITOR
C9, C17
C8, C18
0.1 mF, 100 mil CHIP CAP
1.000 pF 100 mil CHIP CAP
C5, C11
L1
33 pF, 100 mil CHIP CAP
56 nH, 7 TURN, COILCRAFT
N1, N2
R1
R2
R3
Z1
TYPE N FLANGE MOUNT
15 Ω, 1 W CHIP RESISTOR
1 KΩ, 1 W CHIP RESISTOR
33 KΩ, 1 W CHIP RESISTOR
0.471” X 0.080” MICROSTRIP
Z2
1.082” X 0.080” MICROSTRIP
Z3
0.372” X 0.080” MICROSTRIP
Z4,Z5
Z6
0.260” X 0.223” MICROSTRIP
0.050” X 0.080” MICROSTRIP
Z7
0.551” X 0.080” MICROSTRIP
Z8
0.825” X 0.080” MICROSTRIP
Z9
BOARD
0.489” X 0.080” MICROSTRIP
ROGER, ULTRA LAM 2000 THK 0.030”, ε r = 2.55 2oz. ED cu 2 SIDES.
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