PD55008L-E Datasheet, PDF(4/15 Page) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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PD55008L-E Datasheet, PDF (4/15 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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Electrical characteristics

(TCASE = +25 oC)

2.1

Static

Table 3.

Symbol

IDSS

IGSS

VGS(Q)

VDS(ON)

GFS

CISS

COSS

CRSS

Static

Test conditions

VGS = 0 V VDS = 28 V

VGS = 5V VDS = 0 V

VDS = 10 V ID = 150 mA

VGS = 10 V ID = 0.5 A

VDS = 10 V ID = 1.5 A

VGS = 0 V VDS = 12.5 V

f = 1 MHz

PD55008L-E

Min. Typ. Max. Unit

1 ÂµA

2.0

5.0 V

0.13 0.14 V

1.6

mho

3.2

2.2

Dynamic

Table 4. Dynamic

Symbol

Test conditions

POUT

Load

mismatch

VDD = 12.5V, IDQ = 150mA

f = 500MHz

VDD = 12.5V, IDQ = 150mA, POUT = 8W, f = 500MHz

VDD = 15.5V, IDQ = 150mA, POUT = 8W, f = 500MHz

All phase angles

Min. Typ. Max. Unit

17 19

55 63

20:1

VSWR

2.3

Esd protection characteristics

Table 5. Esd protection

Test conditions

Human Body Model

Machine Model

Class

2.4

Moisture sensitivity level

Table 6. Moisture sensitivity level

Test methodology

J-STD-020B

4/15

Rating

MSL 3

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