PD55008L-E Datasheet, PDF (1/15 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD55008L-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 8W with 17dB gain @ 500MHz / 12.5V
■ Integrated ESD protection
■ New leadless plastic package
■ Supplied in tape and reel of 3K units
■ In compliance with 2002/95/EC european
directive
Description
The PD55008L-E is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12V in common source mode at
frequencies up to 1GHz.
PD55008L-E boasts the excellent gain, linearity
and reliability of STH1LV latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™. PD55008L-
E’s superior linearity performance makes it an
ideal solution for car mobile radio.
PowerFLAT™(5x5)
Pin connection
Order codes
Part number
PD55008L-E
Marking
55008
Package
PowerFLAT™(5x5)
Packaging
Tape and reel
January 2007
Rev 2
1/15
www.st.com
15