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PD20015C Datasheet, PDF (4/9 Pages) STMicroelectronics – RF power transistor, LdmoST family
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Electrical characteristics
2
Electrical characteristics
PD20015C
2.1
TCASE = +25 °C
Static
Table 4. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0 V
VGS = 5 V
VDS = 10 V
VGS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test conditions
VDS = 25 V
VDS = 0 V
ID = 350 mA
ID = 1 A
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
Min. Typ. Max. Unit
-
-
-
-
f = 1 MHz -
f = 1 MHz -
f = 1 MHz -
1 μA
1 μA
4.2
V
270 310 mV
49
pF
35
pF
1.0
pF
2.2
2.3
Dynamic
Table 5. Dynamic
Symbol
Test conditions
P3dB VDD = 13.6 V, IDQ = 350 mA
f = 2 GHz
GP
VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 2 GHz
hD
VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 2 GHz
Load VDD = 15.5 V, IDQ = 350 mA, POUT = 20 W, f = 2 GHz
mismatch All phase angles
Min. Typ. Max. Unit
23
-
W
10 11
-
dB
45 53
-
%
20:1
- VSWR
ESD protection characteristics
Table 6.
ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
4/9
Doc ID 14136 Rev 2
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