PD20015C Datasheet, PDF (1/9 Pages) STMicroelectronics – RF power transistor, LdmoST family

PD20015C
RF power transistor, LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
■ BeO free package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD20015C is a common source
N-channel, enhancement-mode lateral field-effect
RF power transistor. It is designed for high gain,
broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 2 GHz.
PD20015C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD20015C’s superior linearity performance
makes it an ideal solution for mobile application.
M243
Epoxy sealed
Figure 1. Pin connection
1
3
2
1. Drain
2. Gate
3. Source
April 2009
Doc ID 14136 Rev 2
1/9
www.st.com
9