P0102BL Datasheet, PDF (4/5 Pages) STMicroelectronics – 0.25A SCRs

P0102BL
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 1k Ω]
10
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 1k Ω
8
6
4
2
Cgk(nF)
0
0
1
2
3
4
5
6
7
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM(A),I ²t(A²s)
100.0
10.0
Tj initial = 25 °C
ITSM
1.0
0.1
0.01
tp(ms)
0.10
1.00
I²t
10.00
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
7
6
5
4
3
2
1
0
1
Number of cycles
10
100
1000
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
1E+1
Tj max.:
Vto = 1.00 V
Rd = 1 Ω
1E+0 _{Tj = Tj max.}
1E-1
Tj = 25°C
VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Rth(j-a) (°C/W)
500
400
300
200
100
0
0
S (mm²)
10 20 30 40 50 60 70 80 90 100
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