P0102BL Datasheet, PDF (3/5 Pages) STMicroelectronics – 0.25A SCRs

P0102BL
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
0.30
0.28 ^{α = 180 °}
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
360 °
0.06
0.04
0.02
IT(av)(A)
α
0.00
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1kΩ]
20
18
16
14
12
10
8
6
4
2
Rgk(kΩ)
0
1E-2
1E-1
1E+0
1E+1
Fig. 2: Average and D.C. on-state current versus
ambient temperature.
IT(av)(A)
0.30
D.C
0.25
0.20
0.15
α = 180°
0.10
0.05
0.00
0
25
Tamb(°C)
50
75
100
125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]
6
5
4
3
IGT
2
1
Tj(°C)
IH & IL
(Rgk = 1k Ω)
0
-40 -20 0 20 40 60 80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt[Rgk = 1kΩ]
10.0
1.0
Rgk(kΩ)
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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