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M28F101 Datasheet, PDF (4/23 Pages) STMicroelectronics – 1 Mb 128K x 8, Chip Erase FLASH MEMORY
M28F101
Table 3. Operations (1)
VPP
Operation
E
Read
VIL
Read Only
VPPL
Output Disable
VIL
Standby
VIH
Electronic Signature
VIL
Read
VIL
Read/Write (2) VPPH
Write
VIL
Output Disable
VIL
Standby
VIH
Notes: 1. X = VIL or VIH.
2. Refer also to the Command table.
G
W
A9
VIL
VIH
A9
VIH
VIH
X
X
X
X
VIL
VIH
VID
VIL
VIH
A9
VIH
VIL Pulse
A9
VIH
VIH
X
X
X
X
DQ0 - DQ7
Data Output
Hi-Z
Hi-Z
Codes
Data Output
Data Input
Hi-Z
Hi-Z
Table 4. Electronic Signature
Identifier
Manufacturer’s Code
Device Code
A0 DQ7
VIL
0
VIH
0
DQ6
0
0
DQ5
1
0
DQ4
0
0
DQ3
0
0
DQ2
0
1
DQ1
0
1
DQ0
0
1
Hex Data
20h
07h
Table 5. Commands (1)
Command
Read
Electronic
Signature (2)
Cycles
1
Operation
Write
2
Write
1st Cycle
A0-A16
X
X
Setup Erase/
Write
X
2
Erase
Erase Verify
2
Write
A0-A16
Setup Program/
Write
X
2
Program
Program Verify
2
Write
X
Reset
2
Write
X
Notes: 1. X = VIL or VIH.
2. Refer also to the Electronic Signature table.
DQ0-DQ7
00h
90h
20h
A0h
40h
C0h
FFh
Operation
2nd Cycle
A0-A16
DQ0-DQ7
Read
00000h
20h
Read
00001h
07h
Write
Read
X
20h
X
Data Output
Write
Read
Write
A0-A16
X
X
Data Input
Data Output
FFh
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