HCC4041UB Datasheet, PDF (4/12 Pages) STMicroelectronics – QUAD TRUE/COMPLEMENT BUFFER

HCC/HCF4041UB
STATIC ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter
Test Conditions
Value
V_I
V_O |I_O | V_{D D}
T _{Lo w}*
25°C
T _High*
(V) (V) (µA) (V) _{Min. Max. Min. Typ. Max. Min. Max.}
Unit
V_IL Input Low
Voltage
4.5/0.5 < 1 5
1
9/1 < 1 10
2
1
1
2
2
V
13.5/1.5 < 1 15
2.5
2.5
2.5
I _OH Output
0/ 5 2.5
Drive
Current
HCC ^{0/ 5 4.6}
Types _{0/10 9.5}
5 – 8.4
5 – 2.1
10 – 6.25
– 6.4 – 12.8
– 1.6 – 3.2
– 5 – 10
– 4.6
– 1.2
– 3.5
0/15 13.5
0/ 5 2.5
15 – 24
– 19 – 38
– 13
mA
5 – 6.8
– 5.44 – 12.8
– 4.08
HCF ^{0/ 5 4.6}
Types _{0/10 9.5}
5 – 1.7
10 – 5.31
– 1.36 – 3.2
– 4.25 – 10
– 1.02
– 3.18
0/15 13.5
15 –20.18
–16.15 – 38
–12.11
I _OL Output
0/ 5 0.4
Sink
Current
HCC
Types
0/10
0.5
0/15 1.5
5 2.1
1.6 3.2
1.2
10 6.25
5 10
3.5
15 24
19 38
13
0/ 5 0.4
HCF
Types
0/10
0.5
0/15 1.5
5 1.7
10 5.31
15 20.18
1.36 3.2
4.25 10
16.15 38
1.02
3.18
12.11
I _IH, I_IL Input
HCC _0/18
18
leakage
Current
Types
HCF 0/15
Types
Any Input
15
± 0.1
± 0.3
±10^{– 5} ± 0.1
±10^{– 5} ± 0.3
±1
µA
±1
C_I
Input Capacitance
Any Input
15 22.5
pF
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ” 0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
DYNAMIC ELECTRICAL CHARACTERISTICS (T _amb = 25°C, C_L = 50pF, R_L = 200kΩ,
typical temperature coefficient for all V_DD values is 0.3 %/°C, all input rise and fall times = 20ns)
Symbol
Parameter
t _{PL H}, t _PHL Propagation Delay Time
t _{T HL}, t _{TL H} Transition Time
Test Conditions
V al ue
V _{D D} (V) Min. Typ. Max.
5
60 120
10
35 70
15
25 50
5
40 80
10
20 40
Unit
ns
ns
15
15 30
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