DB3_01 Datasheet, PDF (4/5 Pages) STMicroelectronics – DIAC

Fig. 1: Relative variation of VBO versus junction
temperature (typical values).
DB3 DB4 SMDB3
Fig. 2: Repetitive peak pulse current versus pulse
duration (maximum values).
VBO [Tj] / VBO [Tj=25°C]
1.10
1.05
DB3/DB4
1.00
0.95
0.90
SMDB3
0.85
0.80
25
Tj(°C)
50
75
100
ITRM(A)
20.0
10.0
1.0
0.1
125
1
DB3/DB4
SMDB3
tp(µs)
10
F=120Hz
Tj initial=25°C
100
Fig. 3: Time duration while current pulse is higher
50mA versus C and Rs (typical values).
tp(µs)
40
Tj=25°C
35
30
25
20
15
10
5
0
10
20
68Ω
47Ω
33Ω
22Ω
10Ω
0Ω
C(nF)
50
100 200
500
PACKAGE MECHANICAL DATA (in millimeters)
DO-35
C
A
C
O/ B
O/ D
O/ D
REF.
A
B
C
D
DIMENSIONS
Millimeters
Inches
Min.
3.05
Max.
4.50
Min.
0.120
Max.
0.177
1.53
2.00 0.060 0.079
28.00
1.102
0.458 0.558 0.018 0.022
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