DB3_01 Datasheet, PDF (2/5 Pages) STMicroelectronics – DIAC

DB3 DB4 SMDB3
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
SMDB3 DB3 DB4 Unit
V_BO
Breakover voltage *
C = 22nF **
MIN.
28
28 35 V
TYP.
32
32 40
MAX. 36
36 45
I V_BO1 - V_BO2 I Breakover voltage
C = 22nF **
MAX.
3
V
symmetry
∆V
Dynamic breakover V_BO and V_F at 10mA MIN.
10
voltage *
5
V
V_O
Output voltage *
see diagram 2
(R=20Ω)
MIN.
10
5
V
I_BO
Breakover current *
C = 22nF **
MAX. 10
50
µA
tr
Rise time *
see diagram 3
MAX. 0.50
2
µs
I_R
Leakage current *
V_R = 0.5 V_BO max MAX.
1
10
µA
I_P
Peak current *
see diagram 2 (Gate) MIN.
1
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
0.30
A
PRODUCT SELECTOR
Part Number
SMDB3
DB3
DB4
V_BO
28 - 36
28 - 36
35 - 45
Package
SOT-23
DO-35
DO-35
ORDERING INFORMATION
SM DB 3
Surface
Mount
Version
Diac Series
2/5
Breakover voltage
3: VBO typ = 32V
4: VBO typ = 40V