DB-54003-470 Datasheet, PDF (4/18 Pages) STMicroelectronics – RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs

Electrical characteristics
2
Electrical characteristics
DB-54003-470
T_A = +25 ^oC, V_DD = 7.5V, I_DQ = 100 mA
Table 2.
Symbol
Electrical Specification
Test Conditions
Freq
P_OUT
Gain
ND
H2
H3
VSWR
Frequency range
@ P_OUT = 3W
@ P_OUT = 3W
2^ND Harmonic @ P_OUT = 3W
3^RD Harmonic @ P_OUT = 3W
Load mismatch all phases @ P_OUT = 3W
Min
Typ
Max
400
470
3
4
12.1 ± 0.3dB
50
53
-53
-50
-60
-55
20:1
Unit
MHz
W
dB
%
dBc
dBc
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