DB-54003-470 Datasheet, PDF (1/18 Pages) STMicroelectronics – RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs

DB-54003-470
RF POWER amplifier using 1 x PD54003
N-Channel enhancement-mode lateral MOSFETs
General feature
■ Excellent thermal stability
■ Frequency: 400 - 470MHz
■ Supply voltage: 7.5V
■ Output power: 3W
■ Efficiency: 50% - 53%
■ Load mismatch: 20:1
■ Beo free amplifier
Description
The DB-54003-470 is a common source
N-Channel Enhancement-Mode Lateral Field
Effect RF power amplifer designed for UHF
Portable radio applications
Order Code
■ DB-54003-470
Mechanical specification:
L = 70 mm, W = 30 mm
June 2006
Rev 1
1/18
www.st.com
18