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| CD00222640 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STx42N65M5
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 16.5 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
100 nA
3
4
5
V
0.070 0.079 â¦
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
4650
pF
-
110
- pF
3.2
pF
Co(er)(1)
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-
100
- pF
Co(tr)(2)
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-
285
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.1
-
â¦
Qg
Total gate charge
VDD = 520 V, ID = 16.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
100
nC
-
26
- nC
38
nC
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/18
Doc ID 15317 Rev 3
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