CD00222640 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET

STx42N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
I_AR
E_AS
dv/dt ⁽³⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by T_JMAX)
Single pulse avalanche energy
(starting T_j = 25°C, I_D = I_AR, V_DD = 50V)
Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 33 A, di/dt ≤ 400 A/µs, V_Peak < V_(BR)DSS
Value
TO-220, TO-247
D²PAK, I²PAK
Unit
TO-220FP
± 25
V
33
33 ⁽¹⁾
A
20.8
20.8 ⁽¹⁾
A
132
132 ⁽¹⁾
A
190
40
W
11
A
950
mJ
15
V/ns
--
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-247 TO-220FP
R_thj-case
Thermal resistance junction-
case max
R_thj-amb
Thermal resistance junction-
ambient max
--
R_thj-pcb
Thermal resistance junction-pcb
max
30
T_l
Maximum lead temperature for
soldering purpose
0.66
62.5
50
--
--
--
300
3.1
°C/W
62.5 °C/W
--
°C/W
°C
Doc ID 15317 Rev 3
3/18