BAT30 Datasheet, PDF (4/12 Pages) Siemens Semiconductor Group – silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz)

Characteristics
BAT30 Series
Figure 5.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-666)
Z_th(j-a)/R_th(j-a)
1.E+00
Single pulse
SOT-666
1.E-01
1.E-02
1.E-03
1.E-02
tP(s)
1.E-01
Epoxy FR4
e_CU=35 µm
1.E+00
1.E+01
Figure 6.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOD-523)
1.E+00
Z_th(j-a)/R_th(j-a)
Single pulse
SOD-523
1.E-01
1.E-02
1.E-03
1.E-03
1.E-02
tP(s)
1.E-01
Epoxy FR4
e_CU=35 µm
1.E+00
1.E+01
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOD-323)
R_th(j-a)(°C/W)
600
500
Epoxy FR4
e_CU=35 µm
400
300
200
0
SCU(mm²)
5
10 15 20 25 30 35 40 45 50
Figure 8. Leakage current versus reverse
applied voltage (typical values)
I_R (A)
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
0
5
T_j=150°C
T_j=125°C
T_j=85°C
T_j=25°C
VR (V)
10
15
20
25
30
Figure 9.
Relative variation of reverse
leakage current versus junction
temperature (typical values)
I_R[T_j] / I_R[T_j=25°C]
1.E+04
V_R=30 V
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140 160
Figure 10. Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
100
F=1 MHz
V_OSC=30 mV_RMS
T_j=25 °C
10
VR(V)
1
1
10
100
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