BAT30 Datasheet, PDF (3/12 Pages) Siemens Semiconductor Group – silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz)

BAT30 Series
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
C Diode capacitance
Test conditions
V_R = 0 V, F = 1 MHz
V_R = 1 V, F = 1 MHz
V_R = 10 V, F = 1 MHz
Min. Typ Max. Unit
22
14
pF
6
Figure 1. Power dissipation versus average Figure 2. Average forward current versus
forward current
ambient temperature (δ = 1)
P (W)
0.175
δ=0.05 δ=0.2 δ=0.1
δ=0.5
δ=1
0.150
0.125
0.100
0.075
0.050
T
0.025
IF(AV) (A)
δ=tp/T
tp
0.000
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
IF(AV) (A)
0.35
0.30
0.25
0.20
0.15
0.10
T
0.05
0.00
0
δ=tp/T
25
tp
50
Tamb (° C)
75
100
125
150
Figure 3.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-23)
1.E+00
Z_th(j-a)/R_th(j-a)
Single pulse
SOT-23
1.E-01
1.E-02
1.E-03
1.E-02
Alumine substrate
10 x 8 x 0.5 mm
tP(s)
1.E-01
1.E+00
1.E+01
1.E+02
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
(SOT-323 / SOD-323)
1.E+00
Z_th(j-a)/R_th(j-a)
Single pulse
SOT-323/SOD-323
1.E-01
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tP(s)
Epoxy FR4
S_CU=2.25 mm²
e_CU=35 µm
1.E+00 1.E+01 1.E+02 1.E+03
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