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| 74AC10_01 Datasheet, PDF (4/8 Pages) STMicroelectronics – TRIPLE 3-INPUT NAND GATE | |||
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74AC10
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance 5.0
4.5
pF
CPD Power Dissipation 5.0
Capacitance
fIN = 10MHz
33
pF
(note 1)
1) CPD is defined as the value of the ICâs internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/3 (per gate)
TEST CIRCUIT
CL
RRLT
=
=
=
50pF or equivalent (includes jig and probe
RZO1 U=T5o0f0pâ¦uloser
equivalent
generator
(typically
50â¦)
capacitance)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
4/8
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