M58WR128ET Datasheet, PDF (39/87 Pages) STMicroelectronics – 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

M58WR128ET, M58WR128EB
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 16, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
M58WR128ET, M58WR128EB
Parameter
70
Min
Max
80
Min
Max
100
Min
Max
V_DD Supply Voltage
1.7
2.2
1.65
2.2
1.65
2.2
V_DDQ Supply Voltage
1.7
3.3
1.65
3.3
1.65
3.3
V_PP Supply Voltage (Factory environment)
11.4 12.6 11.4 12.6 11.4 12.6
V_PP Supply Voltage (Application environment)
-0.4
V_DDQ
+0.4
-0.4
V_DDQ
+0.4
-0.4
V_DDQ
+0.4
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
Load Capacitance (C_L)
30
30
30
Input Rise and Fall Times
5
5
5
Input Pulse Voltages
0 to V_DDQ
0 to V_DDQ
0 to V_DDQ
Input and Output Timing Ref. Voltages
V_DDQ/2
V_DDQ/2
V_DDQ/2
Units
V
V
V
V
°C
pF
ns
V
V
Figure 8. AC Measurement I/O Waveform
VDDQ
0V
VDDQ/2
AI06161
Figure 9. AC Measurement Load Circuit
VDDQ
VDDQ
VDD
0.1µF
0.1µF
DEVICE
UNDER
TEST
16.7kΩ
CL
16.7kΩ
Table 17. Capacitance
Symbol
Parameter
C_IN
Input Capacitance
C_OUT
Output Capacitance
Note: Sampled only, not 100% tested.
Test Condition
V_IN = 0V
V_OUT = 0V
CL includes JIG capacitance
AI06162
Min
Max
Unit
6
8
pF
8
12
pF
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