M58LW064A Datasheet, PDF (39/53 Pages) STMicroelectronics – 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

M58LW064A, M58LW064B
Table 27. Reset, Power-down and Power-up
(T_A = 0 to 70°C, –40 to 85°C, V_DD = 2.7V to 3.6V, V_DD = 1.8V to V_DD)
Symbol
Parameter
Min
Max
Unit
t_PHEL
Reset/Power-down High to Chip Enable Low
50
µs
t_PHQV
Reset/Power-down High to Output Valid
10
µs
t_PHWL
Reset/Power-down High to Write Enable Low
50
µs
t_PLPH
Reset/Power-down Low to Reset/Power-down High
500
ns
t_PLRH
Reset/Power-down Low to Ready High
22
µs
t_PUR
Power-up to Read
10
µs
t_PUW
Power-up to Write
10
µs
t_VDHEL
Supply Voltages High to Chip Enable low
50
ms
t_VDHPH
Supply Voltages High to Reset/Power-down High
1
µs
t_VDHWL
Supply Voltages High to Write Enable Low
50
ms
Table 28. Program, Erase Times and Program Erase Endurance Cycles
(T_A = 0 to 70°C; V_DD = 2.7V to 3.6V; V_DDQ =1.7V to 1.9V)
M58LW064A/B
Parameters
Min
Max
Typ
Typical after
100k W/E Cycles
Uniform Block (1Mb) Erase
1.5
0.75
0.75
Chip Program
54
54
Write Buffer
192
192
Program Suspend Latency Time
10
3
Erase Suspend Latency Time
30
10
Program/Erase Cycles (per Block)
100,000
Unit
sec
sec
µs
µs
µs
cycles
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