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| TIP2955_08 Datasheet, PDF (3/7 Pages) STMicroelectronics – Complementary power transistors | |||
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TIP2955 - TIP3055
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICEX
Collector cut-off current
(VBE = -1.5 V)
VCE = 100 V
VCE = 100 V
TC = 150 oC
ICEO
Collector cut-off current
(IB = 0)
VCE = 30 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 7 V
VCEO(sus)(1)
Collector-emitter sustaining
voltage (IB = 0)
IC = 200 mA
60
VCER(sus)(1)
Collector-emitter sustaining
voltage (RBE = 100 â¦)
IC = 200 mA
70
VCE(sat)(1)
Collector-emitter saturation
voltage
IC = 4 A
IC = 10 A
IB = 400 mA
IB = 3.3 A
VBE(1) Base-emitter voltage
IC = 4 A
VCE = 4 V
hFE(1) DC current gain
IC = 4 A
IC = 10 A
VCE = 4 V 20
VCE = 4 V 5
1. Pulse duration = 300 µs, duty cycle â¤1.5%
Note:
For PNP type voltage and current values are negative
1 mA
5 mA
0.7 mA
5 mA
V
V
1
V
3
V
1.8 V
70
3/7
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