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| STX1F10 Datasheet, PDF (3/9 Pages) STMicroelectronics – High voltage capability | |||
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STX1F10
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current VCE = 980 V
(VBE =0)
VCE = 980 V; TC =125 °C
50 µA
0.5 mA
Obsolete Product(s) - Obsolete Product(s) 2.1
ICEO
Collector cut-off current
(IB =0)
VCE = 400 V
250 µA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
15
V
VCEO(sus) (1)
Collector-emitter
sustaining voltage (IB = 0)
IC = 10 mA
400
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 0.3 A
IC = 1 A
IB = 60 mA
IB = 0.2 A
0.15 0.5 V
0.3 1
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 1 A
IB = 0.2 A
1.1 1.5 V
hFE
DC current gain
IC = 500 µA
IC = 0.45 A
IC = 1 A
VCE = 2 V 15
VCE = 5 V 30 40 61
VCE = 5 V 14 20 28
Resistive load
ts
Storage time
tf
Fall time
VCC = 125 V
IC = 1 A
IB(on) = -IB(off) = 200 mA
2.5
µs
tp = 300 µs VBE(off) = - 5 V
350
ns
1. Pulsed duration = 300 µs, duty cycle ⤠1.5%.
Typical characteristic
Figure 2. Safe operating area
Figure 3. Derating curve
Doc ID 15854 Rev 1
3/9
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