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STX1F10 Datasheet, PDF (1/9 Pages) STMicroelectronics – High voltage capability
STX1F10
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
) ■ Minimum lot-to-lot spread for reliable operation
t(s ■ Very high switching speed
duc Application
ro ■ Battery charger
te P Description
ole The device is manufactured using high voltage
s multi-epitaxial planar technology for high
b switching speeds and high voltage capability.
- O Thanks to an increased intermediate layer, it has
) an intrinsic ruggedness which enables the
t(s transistor to withstand a high collector current
c level during breakdown condition, without using
u the transil protection usually necessary in typical
Obsolete Prod converters for lamp ballast.
TO-92
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STX1F10
X1F10
Package
TO-92
June 2009
Doc ID 15854 Rev 1
Packaging
Box
1/9
www.st.com
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