STW55NM50N Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET TO-247

STW55NM50N
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
dv/dt ⁽²⁾
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 54 A, di/dt ≤ 400 A/µs, V_DD =80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25 °C, I_D=I_AS, V_DD=50 V)
Electrical ratings
Value
500
±25
54
35
216
350
15
–55 to 150
150
Unit
V
V
A
A
A
W
V/ns
°C
°C
Value
0.36
50
300
Value
15
1600
Unit
°C/W
°C/W
°C
Unit
A
mJ
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