STW55NM50N Datasheet, PDF (1/12 Pages) STMicroelectronics – N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET TO-247

STW55NM50N
N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET
TO-247
Features
Type
STW55NM50N
V_DSS
(@Tjmax)
550 V
R_DS(on)
max
<0.054 Ω
I_D
54 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STW55NM50N
Marking
55NM50N
Package
TO-247
Packaging
Tube
July 2008
Rev 2
1/12
www.st.com
12