STW33N60M2 Datasheet, PDF (3/20 Pages) STMicroelectronics – N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
I²PAK, TO-220
TO-247
TO-220FP
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
dv/dt ⁽³⁾
dv/dt⁽⁴⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
± 25
26
26⁽¹⁾
16
16⁽¹⁾
104
104⁽¹⁾
190
35
15
50
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 26 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD= 400 V.
4. V_DS ≤ 480 V
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
Symbol
Table 3. Thermal data
Value
Parameter
TO-220FP
I²PAK,
TO-220
Unit
TO-247
R_thj-case
R_thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
3.6
62.5
0.66
50
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T_jmax )
E_AS
Single pulse avalanche energy (starting
T_j=25°C, I_D= I_AR; V_DD=50)
5
A
2300
mJ
DocID024298 Rev 2
3/19
19