STW33N60M2 Datasheet, PDF (1/20 Pages) STMicroelectronics – N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages

STF33N60M2, STI33N60M2,
STP33N60M2, STW33N60M2
N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Q_g
Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
Features
123
I²PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Order codes
STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2
V_DS @
T_Jmax
R_DS(on)
max
I_D
26 A⁽¹⁾
650 V 0.125 Ω
26 A
1. Limited by maximum junction temperature.
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• MDmesh™ II technology
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LCC converters, resonant converters
AM15572v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2
Table 1. Device summary
Marking
Package
33N60M2
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tube
November 2013
This is information on a product in full production.
DocID024298 Rev 2
1/19
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