STU2N62K3 Datasheet, PDF (3/25 Pages) STMicroelectronics – N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

STB/D/F/P/U2N62K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, DPAK,
TO-220, IPAK
Unit
TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
I_AR
E_AS
V_ISO
dv/dt ⁽³⁾
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Peak diode recovery voltage slope
620
± 30
2.2
1
8.8
45
2.2
85
12
T_stg Storage temperature
T_j Max. operating junction temperature
-55 to 150
150
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. I_SD ≤ 2.2 A, di/dt ≤ 400 A/µs,V_DS peak ≤V_(BR)DSS, V_DD = 80% V_(BR)DSS
2.2 ⁽¹⁾
1 ⁽¹⁾
8.8 ⁽¹⁾
20
2500
V
V
A
A
A
W
A
mJ
V
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
Thermal resistance junction-case
max
R_thj-pcb
Thermal resistance junction-pcb
max
R_thj-amb
Thermal resistance junction-
ambient max
Value
Unit
D²PAK DPAK IPAK TO-220 TO-220FP
2.78
6.25 °C/W
30
50
°C/W
100
62.5
°C/W
Doc ID 018898 Rev 2
3/25