STU2N62K3 Datasheet, PDF (1/25 Pages) STMicroelectronics – N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

STB2N62K3, STD2N62K3,
STF2N62K3, STP2N62K3, STU2N62K3
N-channel 620 V, 3 Ω, 2.2 A SuperMESH3™ Power MOSFET
in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
STB2N62K3
STD2N62K3
STF2N62K3
STP2N62K3
STU2N62K3
V_DSS
620 V
R_DS(on)
max
< 3.6 Ω
I_D
P_TOT
45 W
2.2 A 20 W
45 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
TAB
3
1
D²PAK
TAB
TAB
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2)
Applications
■ Switching applications
G(1)
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
Package
STB2N62K3
STD2N62K3
STF2N62K3
STP2N62K3
STU2N62K3
2N62K3
2N62K3
D²PAK
DPAK
TO-220FP
T0-220
IPAK
March 2012
This is information on a product in full production.
Doc ID 018898 Rev 2
Packaging
Tape and reel
Tube
1/25
www.st.com
25