STS9NF30L Datasheet, PDF (3/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.015 ohm - 9A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

STS9NF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 4.5 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Resistive Load, see fig.3)
V_DD = 24 V I_D = 9 A V_GS = 4.5 V
Min.
Typ.
15
78
Max.
9
12
3
5
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V I_D = 4.5 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, see fig.3)
Min.
Typ.
38
23
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 9 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 9 A di/ dt = 100 A/µs
V_r = 15 V T_j = 150 ^oC
(see test circuit, fig.5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
9
36
Unit
A
A
1.5
V
50
ns
80
nC
2
A
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