STS9NF30L Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 30V - 0.015 ohm - 9A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

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STS9NF30L
N-CHANNEL 30V - 0.015 Ω - 9A SO-8
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
S TS9NF 30L
30 V < 0.020 Ω 9 A
s TYPICAL RDS(on) = 0.018 Ω @ 4.5V
s TYPICAL Q_g = 9 nC @ 4.5V
s OPTIMAL RDS(on) x Qg TRADE-OFF
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
PRELIMINARY DATA
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size™” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS FOR MOBILE
PCs
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
V_GS
I_D
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM(•)
P_tot
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
(•) Pulse width limited by safe operating area
May 2000
Value
30
30
± 20
9
5 .6
36
2 .5
Un it
V
V
V
A
A
A
W
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