STS6DNF30V Datasheet, PDF (3/8 Pages) STMicroelectronics – DUAL N-CHANNEL 30V - 0.026ohm - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 15 V, I_D = 3 A
R_G = 4.7Ω V_GS = 2.5V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 15 V, I_D = 6 A,
V_GS = 2.5 V
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off-Delay Time
Fall Time
Test Conditions
V_DD = 10 V, I_D = 3 A,
R_G = 4.7Ω, V_GS = 2.5 V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 6 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 6 A, di/dt = 100A/µs,
V_DD = 15 V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STS6DNF30V
Min. Typ. Max. Unit
20
ns
25
ns
6.8
9.5
nC
2
nC
3.4
nC
Min.
Typ.
32
13
Max.
Unit
ns
ns
Min. Typ. Max. Unit
6
A
24
A
1.2
V
25
ns
21
nC
1.7
A
Safe Operating Area
Thermal Impedance
3/8