STS6DNF30V Datasheet, PDF (1/8 Pages) STMicroelectronics – DUAL N-CHANNEL 30V - 0.026ohm - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET

STS6DNF30V
DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STS6DNF30V 30 V
<0.030Ω (@4.5V)
<0.038Ω (@2.5V)
6A
s TYPICAL R_DS(on) = 0.026Ω (@4.5V)
s TYPICAL R_DS(on) = 0.030Ω (@2.5V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT
s DC-DC CONVERTERS
s POWER MANAGEMENT IN PORTABLE/
DESKTOP PC_S
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
Single Operation
Drain Current (continuos) at T_C = 100°C
Single Operation
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C Dual Operation
Total Dissipation at T_C = 25°C Single Operation
(q) Pulse width limited by safe operating area
July 2002
Value
30
30
±12
6
3.8
24
2
1.6
Unit
V
V
V
A
A
A
W
W
1/8