STS5PF30L Datasheet, PDF (3/6 Pages) STMicroelectronics – P - CHANNEL 30V - 0.053ohm - 5A SO-8 STripFET POWER MOSFET

STS5PF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 2 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Resistive Load, see fig.3)
V_DD = 24 V I_D = 4 A V_GS = 5 V
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 24 V I_D = 2 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, see fig.3)
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 5 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 5 A di/ dt = 100 A/µs
V_r = 20 V T_j = 150 ^oC
(see test circuit, fig.5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
25
35
Max.
Unit
ns
ns
12.5 16
nC
5
nC
3
nC
Min.
Typ.
125
35
Max.
Unit
ns
ns
Min.
Typ.
Max.
5
20
Unit
A
A
1.2
V
t bd
ns
t bd
nC
t bd
A
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