STS5PF30L Datasheet, PDF (1/6 Pages) STMicroelectronics – P - CHANNEL 30V - 0.053ohm - 5A SO-8 STripFET POWER MOSFET

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STS5PF30L
P - CHANNEL 30V - 0.053Ω - 5A SO-8
STripFET™ POWER MOSFET
TYPE
V _DSS
R_DS(on)
I_D
S TS5PF 30L
30 V < 0.060 Ω 5 A
s TYPICAL RDS(on) = 0.053 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique ”Single Feature Size™
” strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
SO-8
APPLICATIONS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN CELLULAR
PHONES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V_DS
V _DGR
V_GS
I_D
Drain-source Volt age (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Single O peration
Drain Current (continuous) at T_c = 100 ^oC
Single O peration
I_DM(•) Drain Current (pulsed)
P_tot T otal Dissipation at T_c = 25 ^oC
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Value
30
30
± 20
5
3
20
2 .5
November 1999
Un it
V
V
V
A
A
A
W
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