STS4DNF60L Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

STS4DNF60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
t_r
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 15 V
R_G = 4.7 Ω
ID = 2 A
V_GS = 4.5 V
Min.
Typ.
TBD
Max.
TBD
Unit
ns
ns
Q_g
Total Gate Charge
V_DD = 48 V I_D = 4 A V_GS = 4.5 V
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
15
25
nC
4
nC
4
nC
SWITCHING OFF
Symbol
t_r(Voff)
t_f
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 48 V I_D = 4 A
R_G = 4.7 Ω V_GS = 4.5 V
Min.
Typ.
TBD
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I_SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 4 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
ISD = 4 A
V_r = 20 V
I_RRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
T_j = 150 ^oC
Min.
Typ.
Max.
4
16
Unit
A
A
1.2
V
TBD TBD ns
nC
A
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