STS4DNF60L Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

®
TYPE
STS4DNF60L
STS4DNF60L
N - CHANNEL 60V - 0.045Ω - 4A SO-8
STripFET™ POWER MOSFET
V_DSS
R_DS(on)
I_D
60 V < 0.055 Ω
4A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.045 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size™ " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V_DGR
V_GS
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Single Operation
Drain Current (continuous) at T_c = 100 ^oC
Single Operation
I_DM(•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC Dual Operation
Total Dissipation at T_c = 25 ^oC Single Operation
(•) Pulse width limited by safe operating area
Value
60
60
± 20
4
2.5
16
2
1.6
Unit
V
V
V
A
A
A
W
W
December 1998
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