STPS20170CT Datasheet, PDF (3/5 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS20170CT
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(AV)(W)
10
9
8
7
6
5
4
3
2
1
0
0
1
2
δ = 0.05 ^{δ = 0.1 δ = 0.2}
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
3
4
5
6
7
8
9 10 11 12
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(AV)(A)
12
11
Rth(j-a)=Rth(j-c)
10
9
8
7
Rth(j-a)=15°C/W
6
5
4
3
T
2
1
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Fig. 3: Normalized avalanche power derating ver-
sus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
150
125
100
75
50
IM
25
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
T
tp(s)
δ=tp/T
1.E-01
tp
1.E+00
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