STPS20170CT Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS20170CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
T_j
V_F (max)
2 x 10 A
170 V
175°C
0.75 V
A1
K
A2
FEATURES AND BENEFITS
■ HIGH JUNCTION TEMPERATURE CAPABILITY
■ GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
■ LOW LEAKAGE CURRENT
■ AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
A2
K
A1
TO-220AB
STPS20150CT
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
V_RRM Repetitive peak reverse voltage
170
V
I_F(RMS) RMS forward current
30
A
I_F(AV) Average forward current δ = 0.5
Tc = 155°C Per diode
10
A
Per device
20
I_FSM Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
P_ARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
6700
W
T_stg Storage temperature range
- 65 to + 175 °C
T_j Maximum operating junction temperature*
175
°C
dV/dt Critical rate of rise of reverse voltage
10000
V/µs
* Thermal runaway condition for a diode on its own heatsink δPtot/δTj < 1/(Rth(j-a))
March 2004 - Ed: 1
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