STPS10SM80C Datasheet, PDF (3/11 Pages) STMicroelectronics – High junction temperature capability

STPS10SM80C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I_R(1) Reverse leakage current
V_F(2) Forward voltage drop
1. Pulse test: t_p = 5 ms, δ < 2 %
2. Pulse test: t_p = 380 µs, δ < 2 %
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_R = V_RRM
I_F = 2.5 A
I_F = 5 A
I_F = 10 A
-
3.2
15
µA
-
2.8
8
mA
-
0.560 0.610
-
0.485 0.520
-
0.685 0.745
V
-
0.575 0.615
-
0.815 0.880
-
0.660 0.730
To evaluate the conduction losses use the following equation:
P = 0.50 x I_F(AV) + 0.023 x I_F2(RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
4.5 ^PF(AV)(W)
4.0
3.5
3.0
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5 δ = 1
6 ^IF(AV)(A)
5
4
Rth(j-a) = Rth(j-c)
TO-220AB / I²PAK / D²PAK
2.5
3
TO-220FPAB
2.0
1.5
2
1.0
T
1
0.5
0.0
δ = t_p / T t_p
I_F(AV)(A)
0
T_amb(°C)
0
1
2
3
4
5
6
7
0
25
50
75
100
125
150
175
Figure 4. Normalized avalanche power
derating versus pulse duration
P_ARM(tp)
P_ARM(1µs)
1
Figure 5.
Normalized avalanche power
derating versus junction
temperature
P_ARM(T_j)
1.2 ^{PARM(25 °C)}
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
t_p(µs)
0
T_j(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Doc ID 018721 Rev 1
3/11