STPS10SM80C Datasheet, PDF (1/11 Pages) STMicroelectronics – High junction temperature capability

STPS10SM80C
Power Schottky rectifier
Features
■ High junction temperature capability
■ Optimized trade-off between leakage current
and forward voltage drop
■ Low leakage current
■ Avalanche capability specified
■ Insulated package TO-220FPAB
– insulated voltage: 2000 V
– package capacitance: 45 pF
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I²PAK, D²PAK and TO-
220FPAB, this device is particularly suited for use
in notebook, game station, LCD TV and desktop
adapters, providing these applications with a
good efficiency at both low and high load.
Table 1. Device summary
Symbol
I_F(AV)
V_RRM
T_j (max)
V_F (typ)
Value
2x5A
80 V
175 °C
485 mV
A1
K
A2
K
K
A2
K
A1
I²PAK
STPS10SM80CR
K
A2
A1
D²PAK
STPS10SM80CG-TR
A2
K
A1
TO-220AB
STPS10SM80CT
A1
K _A2
TO-220FPAB
STPS10SM80CFP
Figure 1. Electrical characteristics^(a)
V
I
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
IAR
April 2011
a. V_ARM and I_ARM must respect the reverse safe
operating area defined in Figure 13. V_AR and I_AR are
pulse measurements (t_p < 1 µs). V_R, I_R, V_RRM and V_F,
are static characteristics
Doc ID 018721 Rev 1
1/11
www.st.com
11