STP6N25 Datasheet, PDF (3/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STP6N25/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
t_d(on)
t_r
(di/ d t) o n
Q_g
Q_gs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V_DD = 125 V I_D = 3 A
R_G = 50 Ω
V_GS = 10 V
(see test circuit, figure 3)
VDD = 200 V ID = 6 A
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 5)
V_DD = 200 V I_D = 6 A V_GS = 10 V
Min.
Typ.
35
70
220
20
6
7
Max.
50
100
30
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 200 V ID = 6 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
40
25
70
Max.
60
35
100
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
I_{S D}
I _SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 6 A VGS = 0
t_rr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
I_SD = 6 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
6
24
Unit
A
A
1.5
V
180
ns
1.1
µC
12
A
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
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