STP6N25 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

TYPE
STP6N25
STP6N25FI
STP6N25
STP6N25FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
VDSS
R DS( on)
ID
250 V
< 1Ω
6A
250 V
< 1Ω
4A
s TYPICAL R_DS(on) = 0.7 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s MOTOR CONTROL, AUDIO AMPLIFIERS
s INDUSTRIAL ACTUATORS
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
s PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
V_{D S} Drain-source Voltage (V_GS = 0)
V_{DG R} Drain- gate Voltage (R_GS = 20 kΩ)
VGS Gate-source Voltage
I_D
Drain Current (continuous) at T _c = 25 ^oC
I_D
Drain Current (continuous) at T _c = 100 ^oC
IDM(•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1993
Val ue
STP6N25
S T P6 N2 5F I
250
250
± 20
6
4
4
2.6
24
24
70
35
0. 56
0. 28

2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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