STP45NF06L Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 30V, I_D = 19A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 48V, I_D = 38A,
V_GS = 5V
SWITCHING OFF
Symbol
Parameter
Test Conditions
t_d(off)
t_f
Turn-off-Delay Time
Fall Time
V_DD = 30V, I_D = 19A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 3)
t_d(off)
Off-voltage Rise Time
Vclamp =48V, I_D =38A
R_G = 4.7Ω, V_GS = 10V
t_f
Fall Time
(see test circuit, Figure 5)
t_c
Cross-over Time
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 38A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 38A, di/dt = 100A/µs,
V_DD = 100V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STP45NF06L - STB45NF06L
Min.
Typ.
30
105
23
7
10
Max.
31
Unit
ns
ns
nC
nC
nC
Min.
Typ.
65
25
Max.
Unit
ns
ns
50
ns
55
ns
85
ns
Min.
Typ.
70
110
4
Max.
38
152
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedence
3/10