STP45NF06L Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET

STP45NF06L
STB45NF06L
N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D²PAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
STP45NF06L
STB45NF06L
60 V
60 V
< 0.028Ω
< 0.028Ω
s TYPICAL R_DS(on) = 0.022Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOGIC LEVEL GATE DRIVE
I_D
38 A
38 A
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
1
D²PAK
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
September 2002
Value
60
60
±16
38
26
152
80
0.53
7
Unit
V
V
V
A
A
A
W
W/°C
V/ns
–55 to 175
°C
(1) I_SD ≤38A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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