STP1N105K3 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages

STF1N105K3, STFW1N105K3, STP1N105K3
1
Electrical ratings
Electrical ratings
.
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP TO-3PF TO-220
V_DS
V_GS
I_D
I_D
(2)
I_DM
P_TOT
I_AR
E_AS
V_ISO
(3)
dv/dt
Drain source voltage
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single
pulse avalanche (pulse width limited by
T_jmax )
Single pulse avalanche energy
(starting T_J = 25 °C, I_D=I_IAR, V_DD= 50 V)
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Peak diode recovery voltage slope
1050
± 30
(1)
1.4
(1)
0.9
(1)
5.6
20
1.2
130
2500
3500
6
V
V
1.4
A
0.9
A
5.6
A
60
W
A
mJ
V
V/ns
T_j
Operating junction temperature
T_stg Storage temperature
- 55 to 150
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 1.4 A, di/dt ≤ 100 A/μs, V_DD = 80% V_(BR)DSS, V_DS peak ≤ V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Value
Unit
TO-220FP TO-3PF TO-220
6.25
62.50
50
2.08
62.50
°C/W
°C/W
Doc ID 023509 Rev 2
3/18