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STP1N105K3 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
STF1N105K3, STFW1N105K3,
STP1N105K3
N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™
Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
Datasheet — production data
Features
Order codes
VDS
RDS(on)
max
ID PTOT
STF1N105K3
STFW1N105K3 1050 V
STP1N105K3
11 Ω
20 W
1.4 A
60 W
■ Gate charge minimized
■ Extremely large avalanche performance
■ 100% avalanche tested
■ Very low intrinsic capacitance
TAB
3
2
1
TO-220FP
1
3
2
1
TO-3PF
3
2
1
TO-220
Applications
■ Switching applications
Figure 1. Internal schematic diagram
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
' 
* 
6 
Table 1. Device summary
Order codes
STF1N105K3
STFW1N105K3
STP1N105K3
Marking
1N105K3
Package
TO-220FP
TO-3PF
TO-220
$0Y
Packaging
Tube
January 2013
This is information on a product in full production.
Doc ID 023509 Rev 2
1/18
www.st.com
18