STP10LN80K5 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package

STP10LN80K5
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature
Storage temperature
± 30
8
5
32
110
4.5
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area}
(2)_{ISD ≤ 8 A, di/dt 100 A/μs; VDS peak < V(BR)DSS, VDD= 640 V}
(3)_{VDS ≤ 640 V}
Symbol
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
1.14
62.5
Unit
°C/W
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax)
2.7
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
240
mJ
DocID027747 Rev 2
3/14