STP10LN80K5 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package

STP10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP10LN80K5
VDS
800 V
RDS(on) max.
ID
0.63 Ω
8A
 Industry’s lowest R_DS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STP10LN80K5
Table 1: Device summary
Marking
10LN80K5
Package
TO-220
Packing
Tube
December 2015
DocID027747 Rev 2
This is information on a product in full production.
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