STN3N45K3 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3™ Power MOSFET

STN3N45K3, STQ3N45K3-AP, STU3N45K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
SOT-223 TO-92
IPAK
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽¹⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area.
450
V
± 30
V
0.6
1.8
A
0.38
1
A
2.4
7.2
A
2
2.5
27
W
-55 to 150
°C
150
°C
Table 3.
Symbol
Thermal data
Parameter
R_thj-case
R_thj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
SOT-223
62.50
TO-92
50
300
IPAK
4.63
100
Unit
°C/W
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
I_AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 50V)}
Max value
Unit
0.5
A
TBD
mJ
Doc ID 17206 Rev 2
3/12